e3611/e3612 Single Wafer Ashing Systems
Advanced Single Wafer Plasma Asher
The e3600 product line is an advanced plasma ashing/etch system from ESI with the latest photoresist removal technology offering exceptional performance at a very competitive price.
The e3611 and e3612 offer reliable, high-throughput, configurable and flexible solutions. The e3600 series can handle different dimensions of substrates at the same time with no hardware changes. With a compact modular design, it can deliver high throughput with the low cost of ownership.
Features
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TCP 6KW RF plasma or 3KW Microwave Plasma
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Compact Footprint, Very Low Cost of Ownership
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Single or Dual Arm Pick and Place Robot
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Downstream Plasma for extremely low damage
High throughput >100 wph -
Dual Cassette Holders for 100mm to 200mm wafers
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Optional SMIF Load Stations
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Ethernet Smart Controls for subsystems
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Cooling Stations
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ULPA or HEPA System
e3611
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One Chamber
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2 Cassette Stations
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Single Arm Robot
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Low COO
e3612
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Two Chambers
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2 Cassette Stations
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Dual Arm Robot
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Low COO
Applications
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Bulk Resist,
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Post LDI Resist Strip
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Polymer Removal
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Descum processing
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Surface Treatment for better Dep Adhesion
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Post high dose implant strip
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Oxidation
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Isotropic etch
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MEMS
e3611
e3612
Process Definitions
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Ashing: Stripping the photoresist. Typically performed after ion implantation or etching.
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Descum: Removing remaining photoresist or polyimide on wafers for front-end, removing a small portion of resist on the wafer.
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Etching: Isotropic etch for materials such as Si3N4, SiO2, and Poly-Si
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Surface Treatment: Surface activation before wet etch to improve etch process step, improves surface adhesion enhancement before deposition.
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Cleaning: plasma cleaning could be performed after wet etch to complete the cleaning step or after DRIE to remove polymer from the via etc.